IRGPC20K
Overview
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
- Short circuit rated - 10µs @ 125°C, VGE = 15V
- Switching-loss rating includes all "tail" losses
- Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(sat) ≤ 3.5V @VGE = 15V, IC = 6.0A n-channel
