Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
Features
- Short circuit rated - 10µs @ 125°C, VGE = 15V.
- Switching-loss rating includes all "tail" losses.
- Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(sat) ≤ 3.5V
@VGE = 15V, IC = 6.0A
n-channel.
IRGPC20K Datasheet
