IRGPC20M Overview
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent
IRGPC20M Key Features
- Short circuit rated
- 10µs @ 125°C, V GE = 15V
- Switching-loss rating includes all "tail" losses
- Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
