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PD - 9.1129
IRGPC20K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(sat) ≤ 3.5V
@VGE = 15V, IC = 6.0A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
IRGPC20K Datasheet
