IRGPC20K Datasheet | International Rectifier

- 9.1129 INSULATED GATE BIPOLAR TRANSISTOR Features - Short circuit rated - 10µs @ 125°C, VGE = 15V - Switching-loss rating includes all "tail" losses - Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.5V @VGE = 15V, IC = 6.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current...