IRGPC20F Datasheet | IRF

Previous Datasheet Index Next Data Sheet - 9.1022 INSULATED GATE BIPOLAR TRANSISTOR Features - Switching-loss rating includes all "tail" losses - Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.8V @VGE = 15V, I C = 9.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute...