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IRGPS40B120UD - Insulated Gate Bipolar Transistor

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International Rectifier

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IRGPS40B120UD Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGPS40B120UD

Datasheet Details

Part number	IRGPS40B120UD
Manufacturer	International Rectifier
File Size	347.38 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGPS40B120UD Datasheet
Additional preview pages of the IRGPS40B120UD datasheet.

Product details

Features

Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package. G E @ VGE = 15V, N-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Significantly Less Snubber Required.
Excellent Current Sh.

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Published: Aug 27, 2006 |