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IRGPS40B120U Datasheet Insulated Gate Bipolar Transistor

Manufacturer: IRF

Overview: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast.

Datasheet Details

Part number IRGPS40B120U
Manufacturer IRF
File Size 116.79 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGPS40B120U_IRF.pdf

Key Features

  • Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Super-247 Package. VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Significantly Less Snubber Required.
  • Excellent Current Sharing in Parallel Operation. ICE = 40A, Tj=25°C.

IRGPS40B120UD from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
International Rectifier Logo IRGPS40B120UD Insulated Gate Bipolar Transistor International Rectifier
International Rectifier Logo IRGPS40B120UDP Insulated Gate Bipolar Transistor International Rectifier
International Rectifier Logo IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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