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IRGPS40B120U - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Super-247 Package. VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Significantly Less Snubber Required.
  • Excellent Current Sharing in Parallel Operation. ICE = 40A, Tj=25°C.

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Datasheet Details

Part number IRGPS40B120U
Manufacturer IRF
File Size 116.79 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPS40B120U Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.