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IRGPS40B120UDP - Insulated Gate Bipolar Transistor

Key Features

  • Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Super-247 Package.
  • Lead-Free C UltraFast Co-Pack IGBT VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel ICE = 40A, Tj=25°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performa.

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www.DataSheet4U.com PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free C UltraFast Co-Pack IGBT VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel ICE = 40A, Tj=25°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.