IRGPS40B120UDP transistor equivalent, insulated gate bipolar transistor.
* Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristi.
Peak Tj = P dm x Zthjc + Tc
0.01 0.1 1
0.01 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
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Fig 2.
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