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IRGPS40B120UDP Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

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IRGPS40B120UDP insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGPS40B120UDP
Manufacturer	International Rectifier (now Infineon)
File Size	345.61 KB
Description	Insulated Gate Bipolar Transistor
Download	IRGPS40B120UDP Download (PDF)

Overview

www.DataSheet4U.com PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
Lead-Free C UltraFast Co-Pack IGBT VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel ICE = 40A, Tj=25°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performa.

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