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IRGPS40B120UDP - Insulated Gate Bipolar Transistor

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International Rectifier

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IRGPS40B120UDP Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGPS40B120UDP

Datasheet Details

Part number	IRGPS40B120UDP
Manufacturer	International Rectifier
File Size	345.61 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGPS40B120UDP Datasheet
Additional preview pages of the IRGPS40B120UDP datasheet.

Product details

Features

Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package.
Lead-Free C UltraFast Co-Pack IGBT VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel ICE = 40A, Tj=25°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performa.

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Published: Aug 27, 2006 |