Datasheet Summary
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PD- 95967
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- Super-247 Package.
- Lead-Free
UltraFast Co-Pack IGBT
VCES = 1200V VCE(on) typ. = 3.12V
@ VGE = 15V,
N-channel
ICE = 40A, Tj=25°C
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Significantly Less Snubber Required
- Excellent Current Sharing in Parallel Operation.
Super-247™
DataShee
Units
Absolute Maximum...
