IRGS30B60KPBF - Insulated Gate Bipolar Transistor

International Rectifier

Datasheet Details

Part number	IRGS30B60KPBF
Manufacturer	International Rectifier
File Size	377.68 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS30B60KPBF-InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing.

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Published: Feb 16, 2016 |