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IRGS30B60KPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

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IRGS30B60KPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGS30B60KPBF
Manufacturer	International Rectifier (now Infineon)
File Size	377.68 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS30B60KPBF Datasheet

Overview

PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF.

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing.

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