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IRGS6B60KDPBF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

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IRGS6B60KDPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGS6B60KDPBF
Manufacturer	International Rectifier (now Infineon)
File Size	310.35 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS6B60KDPBF Datasheet

Overview

PD - 95229C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Pe.

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