IRGS6B60KDPBF - Insulated Gate Bipolar Transistor

International Rectifier

Datasheet Details

Part number	IRGS6B60KDPBF
Manufacturer	International Rectifier
File Size	310.35 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS6B60KDPBF-InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Pe.

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Published: Feb 16, 2016 |