IRGS6B60KPBF
IRGS6B60KPBF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Positive VCE (on) Temperature Coefficient.
- Lead-Free.
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
G E n-channel
VCES = 600V IC = 7.0A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
TO-220AB
D2Pak
IRGB6B60K IRGS6B60K
TO-262 IRGSL6B60K
Max. 600 13 7.0 26 26 ± 20 90 36 -55 to +150
300 (0.063 in. (1.6mm) from case)
Units V A
°C
Thermal Resistance
RθJC RθCS RθJA RθJA Wt
.irf.
Parameter Junction-to-Case
- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state)- Weight
Min.
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