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IRGS6B60KPBF - Insulated Gate Bipolar Transistor

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free. Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. C G E n-channel VCES = 600V IC = 7.0A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V Absolute Maximum Ratings VCES IC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INSULATED GATE BIPOLAR TRANSISTOR PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. C G E n-channel VCES = 600V IC = 7.0A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.