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IRGS6B60KDPBF - Insulated Gate Bipolar Transistor

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International Rectifier

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IRGS6B60KDPBF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGS6B60KDPBF

Datasheet Details

Part number	IRGS6B60KDPBF
Manufacturer	International Rectifier
File Size	310.35 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS6B60KDPBF Datasheet
Additional preview pages of the IRGS6B60KDPBF datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Pe.

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Published: Feb 16, 2016 |