IRGS6B60KDPBF Description
PD - 95229C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGS6B60KDPBF Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- Low Diode VF
- 10μs Short Circuit Capability
- Square RBSOA
- Ultrasoft Diode Reverse Recovery Characteristics
- Positive VCE (on) Temperature Coefficient
- Lead-Free
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI