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IRGS6B60KDPBF - Insulated Gate Bipolar Transistor

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10μs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Pe.

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Full PDF Text Transcription (Reference)

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PD - 95229C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free G E n-channel IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF VCES = 600V IC = 10A, TC=100°C tsc > 10μs, TJ=150°C VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.