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IRGSL15B60KDPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGSL15B60KDPbF datasheet PDF. This datasheet also includes the IRGB15B60KDPbF variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB15B60KDPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

PD - 95194A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free C IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Tran.