IRGSL14C40LPBF Datasheet | International Rectifier

Features • Most Rugged in Industry • Logic-Level Gate Drive • > 6KV ESD Gate Protection • Low Saturation Voltage • High Self-clamped Inductive Switching Energy • Lead-Free Description The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. .. IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector IRGS14C40LPb F IRGSL14C40LPb F IRGB14C40LPb F •BVCES = 370V min, 430V max •IC @ TC = 110°C = 14A •VCE(on) typ= 1.2V @7A @25°C • IL(min)=11.5A @25°C,L=4.7m H Gate R1 R2 Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL. Absolute Maximum Ratings Parameter Max Clamped 20 14 1 10 Clamped 125 54 - 40 to 175 - 40 to 175 6 11.5 Unit V A A m A m A t PK = 1ms, f = 100Hz V W W °C °C KV C = 100p F, R = 1.5K ohm A L = 4.7m H, T = 25°C Condition RG = 1K ohm VGE = 5V VGE = 5V VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD IL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Continuous Gate Current Peak Gate Current Gate-to-Emitter Voltage Maximum Power Dissipation PD @ T = 110°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Electrostatic Voltage Self-clamped Inductive Switching Current Thermal Resistance Parameter Min Typ Max 1.2 40 °C/W Unit RθJC RθJA ZθJC .irf. Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mounted, Steady State) Transient Thermal Impedance, Juction-to-Case (Fig.11) Page 1 11/19/04 Igni...