IRGSL15B60KDPbF
IRGSL15B60KDPbF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
- Part of the IRGB15B60KDPbF comparator family.
- Part of the IRGB15B60KDPbF comparator family.
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- Lead-Free
IRGB15B60KDPb F IRGS15B60KDPb F IRGSL15B60KDPb F
VCES = 600V IC = 15A, TC=100°C
G E tsc > 10µs, TJ=150°C n-channel
VCE(on) typ. = 1.8V
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak
IRGS15B60KDPb F
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current
- Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
IRGB15B60KDPb F
TO-262
IRGSL15B60KDPb F
Max.
600 31 15 62 62 31 15 64 ± 20 208 83 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V W °C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight
Min.
- -
-...
