IRGSL4B60KD1 Key Features
- Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperatu
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI
- Part: IRGSL4B60KD1
- Manufacturer: International Rectifier (official site)
- Size: 437.61 KB
Related International Rectifier Datasheets
| Part Number | Description |
|---|---|
| IRGSL4B60KD1PbF | Insulated Gate Bipolar Transistor |
| IRGSL4B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGSL4062DPBF | Power MOSFET |
| IRGSL10B60KD | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGSL10B60KDPBF | INSULATED GATE BIPOLAR TRANSISTOR |
IRGSL4B60KD1 Description
PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.