IRGSL4B60KD1, IRGB4B60KD1PBF Datasheet - International Rectifier

IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR

IRGSL4B60KD1 Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF I

IRGSL4B60KD1, IRGB4B60KD1PBF Datasheet

IRGSL4B60KD1 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGSL4B60KD1, IRGB4B60KD1PBF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRGSL4B60KD1, IRGB4B60KD1PBF

Manufacturer:

International Rectifier

File Size:

437.61 KB

Description:

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRGSL4B60KD1, IRGB4B60KD1PBF.
Please refer to the document for exact specifications by model.

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IRGSL4B60KD1 IRGB4B60KD1PBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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