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IRGSL4B60KPBF, IRGB4B60KPBF Datasheet - International Rectifier

IRGSL4B60KPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGSL4B60KPBF Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES

IRGSL4B60KPBF, IRGB4B60KPBF Datasheet

This datasheet PDF includes multiple part numbers: IRGSL4B60KPBF, IRGB4B60KPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRGSL4B60KPBF, IRGB4B60KPBF

Manufacturer:

International Rectifier

File Size:

387.58 KB

Description:

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRGSL4B60KPBF, IRGB4B60KPBF.
Please refer to the document for exact specifications by model.

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IRGSL4B60KPBF IRGB4B60KPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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