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IRGSL8B60K - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

Download the IRGSL8B60K datasheet PDF. This datasheet also includes the IRGB8B60K variant, as both parts are published together in a single manufacturer document.

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IRGSL8B60K insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGB8B60K_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGSL8B60K
Manufacturer	International Rectifier (now Infineon)
File Size	472.11 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGSL8B60K Datasheet

Overview

PD - 94545C INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB8B60K D2Pa.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGSL8B60KPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KD	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL14C40L	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL14C40LPBF	IGBT
IRGSL15B60KD	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL15B60KDPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL30B60K	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL30B60KPbF	Insulated Gate Bipolar Transistor
IRGSL4062DPBF	Power MOSFET