Part number:
IRGSL8B60K
Manufacturer:
International Rectifier
File Size:
472.11 KB
Description:
Insulated gate bipolar transistor.
IRGSL8B60K Datasheet (472.11 KB)
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB8B60K IRGS8B60K IRGSL8B60K VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits
* Benchmark Effic
IRGSL8B60K Datasheet (472.11 KB)
IRGSL8B60K
International Rectifier
472.11 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL14C40LPBF IGBT (International Rectifier)
IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGSL30B60KPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGSL4062DPBF Power MOSFET (International Rectifier)
