IRGSL8B60KPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

Download the IRGSL8B60KPbF datasheet PDF. This datasheet also includes the IRGB8B60KPbF variant, as both parts are published together in a single manufacturer document.

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IRGSL8B60KPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGB8B60KPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGSL8B60KPbF
Manufacturer	International Rectifier (now Infineon)
File Size	453.29 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGSL8B60KPbF Datasheet

Overview

PD - 95645A INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGSL8B60K	INSULATED GATE BIPOLAR TRANSISTOR
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IRGSL15B60KD	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL15B60KDPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL30B60K	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL30B60KPbF	Insulated Gate Bipolar Transistor
IRGSL4062DPBF	Power MOSFET