Download the IRHLG770Z4 datasheet PDF.
This datasheet also covers the IRHLG730Z4 variant, as both devices belong to the same (irhlg7x0z4) power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
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5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Complimentary P-Channel Available IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dis.
Note: The manufacturer provides a single datasheet file (IRHLG730Z4_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHLG770Z4 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHLG770Z4. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD-95865 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads ...
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t Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6Ω 1.07A IRHLG730Z4 300K Rads (Si) 0.6Ω 1.07A IRHLG770Z4 60V, Quad N-CHANNEL TECHNOLOGY MO-036AB International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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IRHLG770Z4 Datasheet
