Download the IRHLUB780Z4 datasheet PDF.
This datasheet also covers the IRHLUB740Z4 variant, as both devices belong to the same (irhlub7x0z4) power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
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5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUB7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Fa.
Note: The manufacturer provides a single datasheet file (IRHLUB740Z4_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHLUB780Z4 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHLUB780Z4. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 95813 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (S...
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t Summary Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (Si) 0.55Ω IRHLUB730Z4 300K Rads (Si) 0.55Ω IRHLUB740Z4 600K Rads (Si) 0.55Ω IRHLUB780Z4 1000K Rads (Si) 0.55Ω ID 0.8A 0.8A 0.8A 0.8A IRHLUB770Z4 60V, N-CHANNEL c TECHNOLOGY UB International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event
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IRHLUB780Z4 Datasheet
