IRHLUB7930Z4 Datasheet | International Rectifier

Description IR Hi Rel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage parator and operational amplifiers. Features - 5V CMOS and TTL patible - Fast Switching - Single Event Effect (SEE) Hardened - Low Total Gate Charge - Simple Drive Requirements - Hermetically Sealed - Surface Mount - Light Weight - plementary N-Channel Available- IRHLUB770Z4, IRHLUBN770Z4 IRHLUBC770Z4, IRHLUBCN770Z4 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -4.5V, TC = 25°C Continuous Drain Current ID2 @ VGS = -4.5V, TC = 100°C IDM @TC = 25°C Continuous Drain Current Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  TJ TSTG Operating Junction and Storage Temperature Range Lead Temperature Weight Value -0.53 -0.33 -2.12 0.57 0.0045 ± 10 33.5 -0.53 0.06 -4.4 -55 to + 150 300 (for 5s) 43 (Typical) For Footnotes, refer to the page 2. 1 International Rectifier Hi Rel Products, Inc. Pre-Irradiation Units W W/°C V m J A m J...