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IRHLUB780Z4 - (IRHLUB7x0Z4) POWER MOSFET

Download the IRHLUB780Z4 datasheet PDF. This datasheet also covers the IRHLUB740Z4 variant, as both devices belong to the same (irhlub7x0z4) power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUB7970Z4 Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Fa.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHLUB740Z4_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHLUB730Z4 N-CHANNEL POWER MOSFET
IRHLUB740Z4 (IRHLUB7x0Z4) POWER MOSFET
IRHLUB770Z4 N-CHANNEL POWER MOSFET
IRHLUB7930Z4 POWER MOSFET
IRHLUB7970Z4 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95813 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (Si) 0.55Ω IRHLUB730Z4 300K Rads (Si) 0.55Ω IRHLUB740Z4 600K Rads (Si) 0.55Ω IRHLUB780Z4 1000K Rads (Si) 0.55Ω ID 0.8A 0.8A 0.8A 0.8A IRHLUB770Z4 60V, N-CHANNEL c TECHNOLOGY UB International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.