IRHLUB780Z4 Datasheet | International Rectifier

Features : n n n n n n n n n 5V CMOS and TTL patible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight plimentary P-Channel Available IRHLUB7970Z4 Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight 0.8 0.5 3.2 0.6 0.0045 ±10 2.0 0.8 0.06 4.0 -55 to 150 300 (for 5s) 43 (Typical) Pre-Irradiation Units A W/°C V m J A m J V/ns o C mg For footnotes refer to the last page .irf. 02/02/04 IRHLUB770Z4 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Min Typ Max Units - 0.07 - - - - - - - - - - - - - - 8.4 - - 0.55 2.0 - 1.0 10 100 -100 3.6 1.5 1.8 8.0 10 26 10 - V V/°C Ω V S( ) µA Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0m A VGS = 4.5V, ID = 0.5A ➃ IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance - -...