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IRHM7160 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRHM7160 (JANSR2N7432) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA) 100V, 35A, N-channel, Rad Hard HEXFET™ Technology.

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • ESD rating: Class 3B per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 100V.
  • ID : 35A.
  • RDS(on),max : 45m (100 krad(Si)).
  • QG,max : 310nC.
  • REF: MIL-PRF-19500/663 Potential.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRHM7130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7054 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7064 (IRHM7064 / IRHM8064) TRANSISTOR N-CHANNEL
IRHM7230 (IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHM7250 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7260 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM7360 N-Channel Transistor
IRHM7360SE N-CHANNEL MOSFET
IRHM7460SE Radiation Hardened Power MOSFET

IRHM7160 Distributor