IRHM7150 Datasheet | International Rectifier

Features : ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 34 21 136 150 1.2 ±20 500 34 15 5.5 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o 300 (0.063 in. (1.6mm) from case for 10s) 9.3 (Typical) g .irf. 8/14/01 IRHM7150 .. Pre-Irradiation @ Tj = 25°C (Unless Otherwise Specified) Min 100 — — — 2.0 8.0 — — — — — — — — — — — — Electrical Characteristics Parameter Typ Max Units — 0.13 — — — — — — — — — — — — — — — 6.8 — — V V/°C Test Conditions VGS =0 V, ID = 1.0m A Reference to 25°C, ID = 1.0m A VGS = 12V, ID = 21A " VGS = 12V, ID = 34A VDS = VGS, ID = 1.0m A VDS > 15V, IDS = 21A " VDS= 80V,VGS=0V VDS = 80V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 34A VDS = 50V VDD = 50V, ID = 14A, VGS = 12V, RG = 2.35Ω IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance 100 -100 160 35 65 45 190 170 130 — n A n C ns n H Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4300 1200 200 — — — p F Source-Drain Diode Ratings and Characteristics Pa...