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International Rectifier Electronic Components Datasheet

IRHMS593064 Datasheet

P-CHANNEL POWER MOSFET

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RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low Ohmic - TO-254AA)
PD-94713E
IRHMS597064
JANSR2N7524T1
60V, P-CHANNEL
REF: MIL-PRF-19500/733
R5 TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHMS597064 100 kRads(Si)
IRHMS593064 300 kRads(Si)
RDS(on)
0.018
0.018
ID
-45A*
-45A*
QPL Part Number
JANSR2N7524T1
JANSF2N7524T1
TO-254AA
Low Ohmic
Description
IRHMS597064 is a part of the International Rectifier
HiRel family of products. IR HiRel R5 technology
provides high performance power MOSFETs for space
applications. These devices have been characterized
for both Total Dose and Single Event Effect (SEE) with
useful performance up to LET of 80 (MeV/(mg/cm2). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC-
DC converters and motor controllers. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Fast Switching
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
Light Weight
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR
EAR
dv/dt
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Value
-45*
Pre-Irradiation
Units
-45*
A
-180
208
W
1.67
W/°C
± 20
890
-45
20.8
-3.8
-55 to + 150
V
mJ
A
mJ
V/ns
°C
300 (0.063 in./1.6 mm from case for 10s)
9.3 (Typical)
g
*Current is limited by package
For Footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-07-10


International Rectifier Electronic Components Datasheet

IRHMS593064 Datasheet

P-CHANNEL POWER MOSFET

No Preview Available !

IRHMS597064
JANSR2N7524T1
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
Gfs
IDSS
IGSS
QG
QGS
QGD
td(on)
tr
td(off)
tf
Ls +LD
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Min. Typ. Max.
-60 ––– –––
––– -0.064 –––
––– ––– 0.018
-2.0 ––– -4.0
39 ––– –––
––– ––– -10
––– ––– -25
––– ––– -100
––– ––– 100
––– ––– 160
––– ––– 60
––– ––– 65
––– ––– 35
––– ––– 150
––– ––– 100
––– ––– 35
––– 6.8 –––
Units
Test Conditions
V
V/°C

VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -45A 
V VDS = VGS, ID = -1.0mA
S VDS = -15V, ID = -45A
µA
VDS = -48V, VGS = 0V
VDS = -48V,VGS = 0V,TJ =125°C
nA
VGS = -20V
VGS = 20V
ID = -45A
nC VDS = -30V
VGS = -12V
VDD = -30V
ns
ID = -45A
RG = 2.35
VGS = -12V
Measured from Drain lead (6mm / 0.25 in
nH
from package) to Source lead (6mm / 0.25
in from package) with Source wire inter-
nally bonded from Source pin to Drain pad
Ciss
Input Capacitance
––– 8040 –––
VGS = 0V
Coss
Output Capacitance
––– 2780 ––– pF VDS = -25V
Crss
Reverse Transfer Capacitance
––– 310 –––
ƒ = 1.0MHz
RG
Iternal Gate Resistance
2.2
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode) ––– ––– -45*
A
ISM
Pulsed Source Current (Body Diode) ––– ––– -180
VSD
Diode Forward Voltage
––– ––– -5.0 V TJ=25°C, IS = -45A, VGS=0V
trr
Reverse Recovery Time
––– ––– 110 ns TJ=25°C, IF = -45A,VDD -25V
Qrr
Reverse Recovery Charge
––– ––– 460 nC di/dt = -100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
* Current is limited by package
Thermal Resistance
Symbol
Parameter
RJC
RCS
RJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient (Typical Socket Mount)
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
0.6
–––
48
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -30V, starting TJ = 25°C, L = 0.88mH, Peak IL = -45A, VGS = -12V
ISD -45A, di/dt -417A/µs, VDD -60V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-07-10


Part Number IRHMS593064
Description P-CHANNEL POWER MOSFET
Maker International Rectifier
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