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IRHMS593064 - P-CHANNEL POWER MOSFET

Download the IRHMS593064 datasheet PDF. This datasheet also covers the IRHMS597064 variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

IRHMS597064 is a part of the International Rectifier HiRel family of products.

IR HiRel R5 technology provides high performance power MOSFETs for space applications.

Features

  • Single Event Effect (SEE) Hardened.
  • Fast Switching.
  • Low RDS(on).
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Electrically Isolated.
  • Light Weight.
  • ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHMS597064-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733 R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMS597064 100 kRads(Si) IRHMS593064 300 kRads(Si) RDS(on) 0.018 0.018 ID -45A* -45A* QPL Part Number JANSR2N7524T1 JANSF2N7524T1 TO-254AA Low Ohmic Description IRHMS597064 is a part of the International Rectifier HiRel family of products. IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2).
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