IRHN2C50SE transistor equivalent, n-channel transistor.
s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutr.
such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits i.
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