IRHN2C50SE - N-Channel Transistor

International Rectifier

Datasheet Details

Part number	IRHN2C50SE
Manufacturer	International Rectifier
File Size	32.41 KB
Description	N-Channel Transistor
Datasheet	IRHN2C50SE_InternationalRectifier.pdf

s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Drive Requirements s Ease of Paralleling s Hermetically Sealed s Surface Mount s Light-Weight Absolute Maximum Ratings ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter.

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Published: Oct 15, 2006 |