IRHN3150 Overview
IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space
IRHN3150 Key Features
- Single event effect (SEE) hardened - Low RDS(on) - Low total gate charge - Simple drive requirements - Hermetically seal
- BVDSS: 100V - ID : 34A - RDS(on),max : 65m - QG,max : 160nC - REF: MIL-PRF-19500/603
IRHN3150 Applications
- DC-DC converter - Motor drives