IRHN2C50SE Overview
Provisional Data Sheet No. PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600 Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No pensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. They are well-suited for...