IRHN7450SE Datasheet TRANSISTOR N-CHANNEL

Manufacturer: International Rectifier (now Infineon)

IRHN7450SE transistor n-channel by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRHN7450SE
Manufacturer	International Rectifier (now Infineon)
File Size	212.54 KB
Description	TRANSISTOR N-CHANNEL
Datasheet	IRHN7450SE Datasheet

Overview

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PD-9.1313A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7450SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.51Ω , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.

Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.

Key Features

s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C I D @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C.

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