n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermeticall.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.

N-CHANNEL POWER MOSFET

IRHNA54064

IRHNA54160

IRHNA54Z60

IRHNA53064

IRHNA53160

IRHNA53260

IRHNA53Z60

IRHNA57064

IRHNA57160

IRHNA57260

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