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IRHNA54064 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHNA54064, a member of the IRHNA53064 RADIATION HARDENED POWER MOSFET family.

Datasheet Summary

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

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www.DataSheet4U.com PD - 91852G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57064 100K Rads (Si) IRHNA53064 300K Rads (Si) IRHNA54064 600K Rads (Si) IRHNA57064 JANSR2N7468U2 60V, N-CHANNEL REF: MIL-PRF-19500/673 5 TECHNOLOGY ™ RDS(on) ID QPL Part Number 0.0056Ω 75*A JANSR2N7468U2 0.0056Ω 75*A JANSF2N7468U2 0.0056Ω 75*A JANSG2N7468U2 IRHNA58064 1000K Rads (Si) 0.0065Ω 75*A JANSH2N7468U2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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