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IRHNA53160 - RADIATION HARDENED POWER MOSFET

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Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

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www.DataSheet4U.com PD - 91860H RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA57160 100K Rads (Si) IRHNA53160 IRHNA54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.012Ω 0.012Ω 0.012Ω 0.013Ω IRHNA57160 JANSR2N7469U2 100V, N-CHANNEL REF: MIL-PRF-19500/673 5 TECHNOLOGY ™ ID QPL Part Number 75*A JANSR2N7469U2 75*A JANSF2N7469U2 75*A JANSG2N7469U2 75*A JANSH2N7469U2 IRHNA58160 1000K Rads (Si) SMD-2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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