Overview: .. PD - 91838C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA57260 100K Rads (Si) IRHNA53260 300K Rads (Si) IRHNA54260 600K Rads (Si) IRHNA58260 1000K Rads (Si) RDS(on) 0.038Ω 0.038Ω 0.038Ω 0.043Ω ID 55A 55A 55A 55A IRHNA57260 200V, N-CHANNEL R5 TECHNOLOGY SMD-2 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
