IRHNA593064 Datasheet - International Rectifier

IRHNA593064 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD-94604B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) IRHNA597064 100K Rads (Si) 0.016Ω IRHNA593064 300K Rads (Si) 0.016Ω ID -56A -56A IRHNA597064 60V, P-CHANNEL 5 TECHNOLOGY SMD-2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 8.

IRHNA593064 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V

IRHNA593064 Datasheet (373.54 KB)