| Part number | IRHNJ3130 |
|---|---|
| Datasheet | IRHNJ3130 Datasheet PDF (Download) |
| File Size | 257.98 KB |
| Manufacturer | International Rectifier |
| Description | N-CHANNEL MOSFET |
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This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
| Part Number | Description | Manufacturer |
|---|---|---|
| IRHNJ4130 | N-CHANNEL MOSFET | International Rectifier |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET | International Rectifier |
| IRHNJ53130 | RADIATION HARDENED POWER MOSFET | International Rectifier |
