logo

IRHNJ57Z30 Datasheet, International Rectifier

IRHNJ57Z30 Datasheet, International Rectifier

IRHNJ57Z30

datasheet Download (Size : 262.19KB)

IRHNJ57Z30 Datasheet

IRHNJ57Z30 mosfet equivalent, radiation hardened power mosfet.

IRHNJ57Z30

datasheet Download (Size : 262.19KB)

IRHNJ57Z30 Datasheet

Features and benefits

n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermeticall.

Application

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.

Image gallery

IRHNJ57Z30 Page 1 IRHNJ57Z30 Page 2 IRHNJ57Z30 Page 3

TAGS

IRHNJ57Z30
RADIATION
HARDENED
POWER
MOSFET
International Rectifier

Manufacturer


International Rectifier

Related datasheet

IRHNJ57034

IRHNJ57130

IRHNJ57230

IRHNJ53034

IRHNJ53130

IRHNJ53230

IRHNJ53Z30

IRHNJ54034

IRHNJ54130

IRHNJ54230

IRHNJ54Z30

IRHNJ58034

IRHNJ58130

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts