Datasheet Details
| Part number | IRHNJ57Z30 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 262.19 KB |
| Description | RADIATION HARDENED POWER MOSFET |
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Download the IRHNJ57Z30 datasheet PDF. This datasheet also includes the IRHNJ53Z30 variant, as both parts are published together in a single manufacturer document.
| Part number | IRHNJ57Z30 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 262.19 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Datasheet |
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|
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www.DataSheet4U.com PD - 93751B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 IRHNJ54Z30 300K Rads (Si) 600K Rads (Si) RDS(on) 0.020Ω 0.020Ω 0.020Ω 0.025Ω ID 22A* 22A* 22A* 22A* IRHNJ57Z30 30V, N-CHANNEL 4 # TECHNOLOGY c IRHNJ58Z30 1000K Rads (Si) SMD-0.5 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
| Part Number | Description |
|---|---|
| IRHNJ57034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ57130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ57230 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53230 | RADIATION HARDENED POWER MOSFET |
| IRHNJ53Z30 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54034 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54130 | RADIATION HARDENED POWER MOSFET |
| IRHNJ54230 | RADIATION HARDENED POWER MOSFET |