IRHNKC67C30
IRHNKC67C30 is Radiation Hardened Power MOSFET manufactured by International Rectifier.
Features
- Low RDS(on)
- Fast switching
- Single event effect (SEE) hardened
- Low total gate charge
- Simple drive requirements
- Hermetically sealed
- Enhanced ceramic package for direct to pcb mounting
- Light weight
- Surface mount with low CTE mismatch to PCB
- ESD rating: class 2 per MIL-STD-750, Method 1020
Product Summary
- BVDSS: 600V
- ID : 3.4A
- RDS(on), max : 3.1
- QG, max: 52n C
- REF: MIL-PRF-19500/781
Potential Applications
- DC-DC converter
- Motor drives
- Electric ion propulsion systems
SMD-0.5e (Ceramic Lid)
Product Validation
Qualified according to MIL-PRF-19500 for space applications
Description
IR Hi Rel R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 83.6Me V- cm2/mg. Their bination of low RDS(on) and faster switching times reduces the power losses and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters.
Ordering Information
Table 1
Ordering options
Part number
Package
SMD-0.5e (Ceramic Lid)
JANSR2N7598U3CE
SMD-0.5e (Ceramic Lid)
IRHNKC63C30
SMD-0.5e (Ceramic Lid)
JANSF2N7598U3CE
SMD-0.5e (Ceramic Lid)
Screening Level COTS JANS COTS JANS
TID Level 100 krad(Si) 100 krad(Si) 300 krad(Si) 300...