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International Rectifier Electronic Components Datasheet

IRHNM57214SE Datasheet

N-CHANNEL POWER MOSFET

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PD-97818C
IRHNM57214SE
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHNM57214SE 100 kRads(Si)
1.72.4A
Refer to page 9 for additional part number -
IRHNMC57214SE (Ceramic Lid)
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and tem-
perature stability of electrical parameters.
250V, N-CHANNEL
R5 TECHNOLOGY
SMD-0.2
(METAL LID)
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 1B per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM @TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR
EAR
dv/dt
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
3.7
2.4
14.8
40
0.32
± 20
34
3.7
4.0
3.7
-55 to + 150
300 (for 5s)
0.25 (Typical)
For Footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
2019-11-13


International Rectifier Electronic Components Datasheet

IRHNM57214SE Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

IRHNM57214SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Gfs
IDSS
IGSS
QG
QGS
QGD
td(on)
tr
td(off)
tf
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
Test Conditions
250 ––– –––
V VGS = 0V, ID = 1.0mA
––– 0.27 ––– V/°C Reference to 25°C, ID = 1.0mA
––– ––– 1.7
 VGS = 12V, ID2 = 2.4A  
2.5 –––
––– -9.1
4.5
–––
V
mV/°C
VDS = VGS, ID = 1.0mA
2.0 ––– –––
––– ––– 10
––– ––– 25
S VDS = 15V, ID2 = 2.4A
µA
VDS = 200V, VGS = 0V
VDS = 200V,VGS = 0V,TJ =125°C
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
––– ––– 9.1
ID1 = 3.7A
––– ––– 2.9 nC VDS = 125V
––– ––– 4.3
VGS = 12V
––– ––– 6.3
––– ––– 6.3
––– ––– 16.8
––– ––– 14
VDD = 125V
ns
ID1 = 3.7A
RG = 7.5
VGS = 12V
Ls +LD
Total Inductance
––– 6.8 –––
nH
Measured from the center of drain pad to
center of source pad
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
––– 308 –––
––– 51 –––
––– 1.2 –––
––– 6.6 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
ƒ = 1.0MHz,open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode) ––– ––– 3.7
A
ISM
Pulsed Source Current (Body Diode) ––– ––– 14.8
VSD
Diode Forward Voltage
––– ––– 1.0
V TJ = 25°C,IS = 3.7A, VGS = 0V
trr
Reverse Recovery Time
––– ––– 145 ns TJ = 25°C, IF = 3.7A, VDD 25V
Qrr
Reverse Recovery Charge
––– ––– 857 nC di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter
RJC
Junction-to-Case
Min.
–––
Typ.
–––
Max.
3.12
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L =5.0mH, Peak IL = 3.7A, VGS = 12V
ISD 3.7A, di/dt 1018A/µs, VDD 250V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-11-13


Part Number IRHNM57214SE
Description N-CHANNEL POWER MOSFET
Maker International Rectifier
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