IRHNM57214SE mosfet equivalent, n-channel power mosfet.
* Single Event Effect (SEE) Hardened
* Low RDS(on)
* Low Total Gate Charge
* Simple Drive Requirements
* Ease of Paralleling
* Hermetically Sealed.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(m.
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