IRHNM57214SE Datasheet | International Rectifier

Description IR Hi Rel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (Me V/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. 250V, N-CHANNEL R5 TECHNOLOGY SMD-0.2 (METAL LID) Features - Single Event Effect (SEE) Hardened - Low RDS(on) - Low Total Gate Charge - Simple Drive Requirements - Ease of Paralleling - Hermetically Sealed - Surface Mount - Ceramic Package - Light Weight - ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  IAR EAR dv/dt Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  TJ TSTG Operating Junction and Storage Temperature Range Pckg. Mounting Surface Temp. Weight 3.7 2.4 14.8 40 0.32 ± 20 34 3.7 4.0 3.7 -55 to + 150 300 (for 5s) 0.25 (Typical) For Footnotes refer to the page 2. International Rectifier Hi Rel Products, Inc. Pre-Irradiation...