Datasheet Summary
..
- 94211A
IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 IRHQ54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.27Ω 0.27Ω 0.27Ω 0.29Ω ID 4.6A 4.6A 4.6A 4.6A
100V, Quad N-CHANNEL
RAD-Hard HEXFET
™ ®
4 # TECHNOLOGY
IRHQ58110 1000K Rads (Si)
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The...