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IRHQ563110 - (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT

Download the IRHQ563110 datasheet PDF. This datasheet also covers the IRHQ567110 variant, as both devices belong to the same (irhq567110 / irhq563110) power mosfet surface mount family and are provided as variant models within a single manufacturer datasheet.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings ( Per Die) Parameter ID @ VGS = ±12V, TC = 25°C ID @ VGS = ±12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Sourc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHQ567110_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHQ567110 (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT
IRHQ53110 (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ54110 (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ57110 Radiation Hardened Power MOSFET
IRHQ57214SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 94057B IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) 4 # TECHNOLOGY ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω IRHQ567110 100K Rads (Si) 0.96Ω IRHQ563110 300K Rads (Si) 0.98Ω ID 4.6A 4.6A -2.8A -2.8A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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