IRHQ567110 Datasheet | International Rectifier

.. - 94057B IRHQ567110 RADIATION HARDENED 100V, bination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) 4 # TECHNOLOGY ™ ® Product Summary Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω IRHQ567110 100K Rads (Si) 0.96Ω IRHQ563110 300K Rads (Si) 0.98Ω ID 4.6A 4.6A -2.8A -2.8A CHANNEL N N P P LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single...