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PD-93881C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A
IRHQ57214SE 250V, QUAD N-CHANNEL
5
TECHNOLOGY
LCC-28
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects(SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.