n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source.
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Full PDF Text Transcription
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PD - 93794C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ9110 100K Rads (Si) IRHQ93110 300K Rads (Si) RDS(on) 1.1Ω 1.1Ω ID -2.3A -2.3A
IRHQ9110 100V, QUAD P-CHANNEL
RAD-Hard HEXFET
™ ®
MOSFET TECHNOLOGY
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
IRHQ9110 Datasheet
