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IRL1004LPBF - Power MOSFET

General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • RNAT IONAL RE CT IF IE R LOGO PART NUMB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 LINE L AS S E MB L Y L OT CODE OR INT ERNAT IONAL RE CT IF IER LOGO AS S EMB LY L OT CODE PART NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F RE E.

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Full PDF Text Transcription for IRL1004LPBF (Reference)

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www.DataSheet4U.com PD - 95575 Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Sw...

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istance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL1004SPbF IRL1004LPbF HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065Ω ID = 130A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.