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IRL1404SPBF - Power MOSFET

Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • (Lead-Free) T H I S IS AN IR F 5 30 S WIT H L OT COD E 80 24 AS S E MB L E D ON WW 0 2, 20 00 IN T H E AS S E MB L Y L IN E "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S D AT E COD E YE AR 0 = 2 00 0 WE E K 02 L IN E L OR INT E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGN AT E S L E AD -F R E E P R ODU CT (OPT IONAL ) Y.

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PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching www.DataSheet4U.com l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D IRL1404SPbF IRL1404LPbF VDSS = 40V RDS(on) = 0.004Ω G S Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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