Download IRL1404SPBF Datasheet PDF
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Datasheet Summary

- 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching .. l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET IRL1404SPbF IRL1404LPbF VDSS = 40V RDS(on) = 0.004Ω Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The...