IRL1404S Overview
l HEXFET® Power MOSFET D IRL1404S IRL1404L VDSS = 40V G S RDS(on) = 0.004Ω ID = 160A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely...
IRL1404S Key Features
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
