Description
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- (Lead-Free)
T H I S IS AN IR F 5 30 S WIT H L OT COD E 80 24 AS S E MB L E D ON WW 0 2, 20 00 IN T H E AS S E MB L Y L IN E "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E P AR T N U MB E R F 53 0S D AT E COD E YE AR 0 = 2 00 0 WE E K 02 L IN E L
OR
INT E R N AT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGN AT E S L E AD -F R E E P R ODU CT (OPT IONAL ) Y.
IRL1404SPBF Datasheet
