IRL1404ZPbF Datasheet | International Rectifier

Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. - 95446B IRL1404ZPb F IRL1404ZSPb F IRL1404ZLPb F HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.1mΩ ID = 120A TO-220AB D2Pak TO-262 IRL1404ZPb F IRL1404ZSPb F IRL1404ZLPb F Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V ™Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Linear Derating Factor VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Gate-to-Source Voltage d Single Pulse Avalanche Energy h Single Pulse Avalanche Energy Tested Value ÙAvalanche Current g Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Parameter Junction-to-Case i Case-to-Sink, Flat, Greased Surface i Junction-to-Ambient jÃJunction-to-Ambient (PCB Mount) .irf. Max. k200 k140 k120 790 230 1.5 ± 16 220 490 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) y y10 lbf in (1.1N m) Typ. - - -...