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IRL1404Z - AUTOMOTIVE MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D IRL1404Z IRL1404ZS IRL1404ZL VDSS = 40V RDS(on) = 3.1mW ID = 75A S.

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www.DataSheet4U.com PD - 94804A AUTOMOTIVE MOSFET Features l l l l l l Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D IRL1404Z IRL1404ZS IRL1404ZL VDSS = 40V RDS(on) = 3.1mW ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .